The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Dec. 28, 2017
Applicant:
Spin Memory, Inc., Wilmington, DE (US);
Inventors:
Marcin Gajek, Berkeley, CA (US);
Michail Tzoufras, Sunnyvale, CA (US);
Davide Guarisco, San Jose, CA (US);
Eric Michael Ryan, Fremont, CA (US);
Assignee:
SPIN MEMORY, INC., Wilmington, DE (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); G11C 11/56 (2006.01); G11C 11/16 (2006.01); H01L 43/14 (2006.01); H01L 43/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/06 (2013.01); H01L 43/08 (2013.01); H01L 43/14 (2013.01);
Abstract
A magnetic memory device is provided. The magnetic memory device includes: (i) a cylindrical core, (ii) a first cylindrical ferromagnetic layer that surrounds the cylindrical core, (iii) a spacer layer that surrounds the first cylindrical ferromagnetic layer, and (iv) a second cylindrical ferromagnetic layer that surrounds the spacer layer. The cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer collectively form a magnetic tunnel junction.