Company Filing History:

6 out of 1,284

Maxim Integrated Products, Inc.

patents

Northern Arizona University

patents

Years Active: 2004-2025

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10 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12438737 - Program-read-erase schemes to protect PUF challenge-response-pairs with pre-formed ReRAMS (2025-10-07),

2. 7944750 - Multi-programmable non-volatile memory cell (2011-05-17),

3. 7835186 - Method of programming a selected memory cell (2010-11-16),

4. 7835184 - EEPROM memory cell with first-dopant-type control gate transister, and second-dopant type program/erase and access transistors formed in common well (2010-11-16),

5. 7791955 - Method of erasing a block of memory cells (2010-09-07),

6. 7535758 - One or multiple-times programmable device (2009-05-19),

7. 7436710 - EEPROM memory device with cell having NMOS in a P pocket as a control gate, PMOS program/erase transistor, and PMOS access transistor in a common well (2008-10-14),

8. 7301194 - Shrinkable and highly coupled double poly EEPROM with inverter (2007-11-27),

9. 7091077 - Method of directionally trimming polysilicon width (2006-08-15),

10. 6711063 - EEPROM memory cell array architecture for substantially eliminating leakage current (2004-03-23),

Title: The Innovations of David Kuan-Yu Liu

Introduction

David Kuan-Yu Liu is a prominent inventor based in Fremont, California. He has made significant contributions to the field of memory technology, holding a total of 10 patents. His work focuses on innovative memory devices and methods that enhance data storage and retrieval processes.

Latest Patents

One of Liu's latest patents is titled "Program-read-erase schemes to protect PUF challenge-response-pairs with pre-formed ReRAMS." This invention discloses arrangements and methods for a program-read-erase memory using ReRAM cells. The memory includes an array of pristine ReRAM cells, where a first digital symbol is encoded by partially forming cells, while the opposite digital value is encoded in pristine cells. During the read process, all cells are subjected to partial formation voltage, which erases all data as it is being read. This innovative approach allows ReRAM memories to store challenges for interrogating PUFs for the recovery of PUF-generated encryption keys.

Another notable patent is for a "Multi-programmable non-volatile memory cell." This invention describes a non-volatile memory device and method for manufacturing and programming that does not require a control gate for programming or erasure. The memory device consists of two wells with opposite conductivity types to the semiconductor body. Specific voltages are applied to various regions to program, erase, and read the memory device effectively.

Career Highlights

David Liu has worked with several notable companies throughout his career, including Maxim Integrated Products, Inc. and Xilinx, Inc. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Liu has collaborated with talented individuals in the field, including Venkatraman Prabhakar and Nirmal Ratnakumar. These collaborations have likely fostered a creative environment that has led to groundbreaking advancements in memory technology.

Conclusion

David Kuan-Yu Liu is a distinguished inventor whose work in memory technology has resulted in several innovative patents. His contributions continue to shape the future of data storage and retrieval systems.

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