The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2011

Filed:

Oct. 22, 2008
Applicants:

Albert Bergemont, Palo Alto, CA (US);

David Kuan-yu Liu, Fremont, CA (US);

Venkatraman Prabhakar, Pleasanton, CA (US);

Sridevi Rajagopalan Schmidt, San Jose, CA (US);

Inventors:

Albert Bergemont, Palo Alto, CA (US);

David Kuan-Yu Liu, Fremont, CA (US);

Venkatraman Prabhakar, Pleasanton, CA (US);

Sridevi Rajagopalan Schmidt, San Jose, CA (US);

Assignee:

Maxim Integrated Products, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device and method for manufacture and programing which does not require a control gate for the programing or erasure of the device. The memory device is comprised of two wells with the opposite conductivity type of the semiconductor body. In one of the wells is a source and drain well of the same conductivity type as of the body. A oxide is formed on the surface of the body on which a floating gate is formed. Specific voltages are applied to the source, drain, first well and second well region to program, erase and read the memory device.


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