This inventor holds 5 USPTO granted patents and 1 published patent application. Top assignees: Freescale Semiconductor,inc., Motorola Corporation. Active years: 2002-2012.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2002-2012
Title: The Innovations of Daniel T Pham
Introduction
Daniel T Pham is a notable inventor based in Austin, TX (US). He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work primarily focuses on enhancing the performance and efficiency of power MOSFET devices.
Latest Patents
One of his latest patents involves a power MOSFET with a gate structure made of different materials. This semiconductor device features a semiconductor layer of a first conductivity type and a first doping concentration. The design includes a first semiconductor region, used as a drain, which has a lower doping concentration than the semiconductor layer and is positioned over it. A gate dielectric is placed over the first semiconductor region, while a gate electrode is situated above the gate dielectric. This gate electrode consists of a metal-containing center portion flanked by first and second silicon portions. Additionally, a second semiconductor region, functioning as a channel, has a portion located beneath the first silicon portion and the gate dielectric. A third semiconductor region, serving as a source, is laterally adjacent to the first portion of the second semiconductor region. The innovative metal-containing center portion replaces silicon, which significantly increases the source to drain breakdown voltage.
Career Highlights
Daniel T Pham has worked with prominent companies in the semiconductor industry, including Freescale Semiconductor and Motorola Corporation. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor devices.
Collaborations
Throughout his career, Daniel has collaborated with talented individuals such as Bich-Yen Nguyen and Ramachandran Muralidhar. These partnerships have contributed to the advancement of his innovative projects.
Conclusion
Daniel T Pham's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence the development of efficient power MOSFET devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile