Daniel K Lottis

Title: The Innovations of Daniel K Lottis

Introduction

Daniel K Lottis is a notable inventor based in Sunnyvale, California. He has made significant contributions to the field of magnetic devices, holding a total of three patents. His work focuses on advancements in spin transfer torque tunneling magnetoresistive devices, which have important applications in data storage and processing.

Latest Patents

Lottis's latest patents include a spin transfer torque tunneling magnetoresistive device featuring a laminated free layer with perpendicular magnetic anisotropy. This innovative design incorporates a magnetic reference layer structure with magnetic anisotropy that is perpendicular to the substrate plane. The laminated magnetic free layer consists of at least three sublayers, such as CoFeB, CoPt, FePt, or CoPd, each separated by a tantalum dusting layer. An insulative barrier layer, typically made of MgO, is positioned between the laminated free layer and the magnetic reference layer structure. The device also includes conductive base and top electrodes, along with a current polarizing structure that has magnetic anisotropy parallel to the substrate plane.

Career Highlights

Throughout his career, Lottis has worked with prominent companies in the technology sector. He has been associated with Western Digital and Grandis, Inc., where he has contributed to the development of cutting-edge technologies in data storage solutions.

Collaborations

Lottis has collaborated with talented individuals in his field, including Shaoping Li and Gerardo Bertero. These partnerships have fostered innovation and have been instrumental in advancing the technologies he has worked on.

Conclusion

Daniel K Lottis is a distinguished inventor whose work in spin transfer torque tunneling magnetoresistive devices has made a significant impact in the technology industry. His contributions continue to influence advancements in data storage and processing technologies.