The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Dec. 08, 2014
Western Digital (Fremont), Llc, Fremont, CA (US);
Shaoping Li, San Ramon, CA (US);
Gerardo A. Bertero, Redwood City, CA (US);
Yuankai Zheng, Fremont, CA (US);
Qunwen Leng, Palo Alto, CA (US);
Shihai He, Fremont, CA (US);
Yunfei Ding, Fremont, CA (US);
Ming Mao, Dublin, CA (US);
Abhinandan Chougule, Gilroy, CA (US);
Daniel K. Lottis, Sunnyvale, CA (US);
Western Digital (Fremont), LLC, Fremont, CA (US);
Abstract
A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of 6 to 30 Angstroms of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a tantalum dusting layer. An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).