Western Digital (fremont), Inc.

Grandis, Inc.

Daniel K Lottis

Yuankai Zheng

Shaoping Li

Ming Mao

Gerardo Bertero

Qunwen Leng

Yunfei Ding

Shihai He

Abhinandan Chougule

Eugene Youjun Chen

Xueti Tang

Steven M Watts

A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a dusting layer (e.g. tantalum). An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).

Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy

A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of 6 to 30 Angstroms of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a tantalum dusting layer. An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).

A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.

Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements

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Sunnyvale, CA, United States of America

Daniel K Lottis