Daniel G Georgiev

Title: The Innovative Contributions of Daniel G Georgiev

Introduction

Daniel G Georgiev is a notable inventor based in Canton, MI (US). He has made significant contributions to the field of power devices and nano-structures, holding a total of 3 patents. His work focuses on enhancing the efficiency and manufacturing processes of advanced electronic components.

Latest Patents

One of his latest patents is titled "Multi-layer hybrid edge termination for III-N power devices." This invention presents a hybrid edge termination structure that improves upon traditional junction termination extension (JTE) architectures. It incorporates an additional layer of guard ring structures, allowing for better implantation of dopants. The three-layer structure features a top and bottom layer with constant dopant concentrations, while the middle layer consists of alternating regions that exhibit properties of either the top or bottom layer. This design achieves a varying charge profile similar to tapered edge termination but simplifies manufacturing and reduces costs.

Another significant patent is the "Method of forming gated, self-aligned micro-structures and nano structures." This method involves irradiating a thermally conductive laminate to create nano-structures for electron extraction. The process includes melting a defined area of the laminate and cooling it inwardly to form a nano-structure with an apical nano-tip for electron emission. This innovation is crucial for developing gated field emitter devices.

Career Highlights

Daniel G Georgiev has worked with esteemed institutions such as Wayne State University and the United States Navy. His experience in these organizations has allowed him to collaborate on various innovative projects, further enhancing his expertise in the field.

Collaborations

Throughout his career, Georgiev has collaborated with notable individuals, including Ronald J Baird and Ivan Avrutsky. These partnerships have contributed to the advancement of his research and inventions.

Conclusion

Daniel G Georgiev's contributions to the fields of power devices and nano-structures demonstrate his innovative spirit and commitment to advancing technology. His patents reflect a deep understanding of complex engineering challenges and a drive to create efficient solutions.