The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Aug. 01, 2008
Ronald J. Baird, Grosse Ile, MI (US);
Daniel G. Georgiev, Canton, MI (US);
Ivan Avrutsky, Troy, MI (US);
Golam Newaz, Ann Arbor, MI (US);
Gregory W. Auner, Livonia, MI (US);
Ronald J. Baird, Grosse Ile, MI (US);
Daniel G. Georgiev, Canton, MI (US);
Ivan Avrutsky, Troy, MI (US);
Golam Newaz, Ann Arbor, MI (US);
Gregory W. Auner, Livonia, MI (US);
Wayne State University, Detroit, MI (US);
Abstract
Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate. The laminate comprises a thermally conductive film and a patterned layer disposed on the first surface of the film. The patterned layer has a pattern formed therethrough, defining the area for melting. The film is insulated at a second surface thereof to provide two-dimensional heat transfer laterally in plane of the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form the nano-structure having an apical nano-tip for electron emission centered in an electrically isolated aperture that serves as a gate electrode to control electron extraction in a gated field emitter device.