Wayne State University

USA As Represented by Secretary of the Navy

Daniel G Georgiev

Gregory William Auner

Golam Newaz

Ivan Avrutsky

Ronald J Baird

Karl D Hobart

Travis J Anderson

Andrew D Koehler

Alan G Jacobs

Matthew Porter

Mona A Ebrish

Prakash Pandey

Tolen Michael Nelson

Raghav Khanna

Michael Robert Hontz

A hybrid edge termination structure and method of forming the same. The hybrid edge termination structure in accordance with the invention is based on a junction termination extension (JTE) architecture, but includes an additional Layer of guard ring (GR) structures to further implement the implantation of dopants into the structure. The hybrid edge termination structure of the invention has a three-Layer structure, with a top Layer and a bottom Layer each having a constant dopant concentration in the lateral direction, and a middle Layer consisting of a plurality of spatially defined alternating regions that exhibit the electrical properties of either the top or bottom layer. By including the second layer, a discretized varying charge profile can be obtained that approximates the varying charge profile obtained using tapered edge termination but with easier manufacturing and lower cost.

Multi-layer hybrid edge termination for III-N power devices

Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate. The laminate comprises a thermally conductive film and a patterned layer disposed on the first surface of the film. The patterned layer has a pattern formed therethrough, defining the area for melting. The film is insulated at a second surface thereof to provide two-dimensional heat transfer laterally in plane of the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form the nano-structure having an apical nano-tip for electron emission centered in an electrically isolated aperture that serves as a gate electrode to control electron extraction in a gated field emitter device.

Method of forming gated, self-aligned micro-structures and nano structures

Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to melt the area across the film. The film is insulated on a second surface to provide two-dimensional heat transfer across the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form a nano-structure having an apical nano-tip for electron extraction.

Method of forming micro-structures and nano-structures

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Canton, MI, United States of America

Daniel G Georgiev