Company Filing History:
Years Active: 2005-2008
Title: Innovations of Daniel C Diana: Pioneering Ferroelectric Memory Technologies
Introduction
Daniel C Diana is a noted inventor based in Portland, OR, who has made significant advancements in the field of memory technology. With a total of 10 patents to his name, Diana has focused on enhancing the performance of polymer memory cells through innovative methodologies. His contributions are particularly relevant in the realm of ferroelectric materials, which are essential for developing next-generation memory devices.
Latest Patents
Daniel C Diana's recent patents reflect his dedication to improving ferroelectric characteristics. One of his notable inventions is a method for increasing the ferroelectric characteristics of polymer memory cells. This method involves heating polymer materials above their Curie temperature to align the domains of the material with an externally applied electric field, ultimately enhancing the memory cell's performance. Additionally, he has developed a ferroelectric polymer memory structure along with a method for its formation. This invention outlines a process where lower electrode memory device portions are constructed using a damascene patterning process, while upper electrode portions are created through a subtractive patterning technique.
Career Highlights
Currently, Diana is associated with Intel Corporation, a global leader in the technology sector. At Intel, he has played a crucial role in research and development projects focused on polymer memory technology, contributing to advancements that meet the growing demands for data storage capacity and speed.
Collaborations
Throughout his career, Daniel C Diana has collaborated with esteemed professionals, including Ebrahim Andideh and Hitesh Windlass. Working alongside such talented colleagues has likely enriched his perspective and inspired further innovations in the field of ferroelectric materials.
Conclusion
Daniel C Diana stands out as a prominent figure in the field of innovations in polymer memory technology. Through his patented methods and collaborations at Intel Corporation, he continues to push the boundaries of what is possible in data storage, showcasing the potential of ferroelectric materials in future applications. His work not only contributes to the evolution of memory devices but also exemplifies the spirit of innovation that drives technological advancement.