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For the Inventor, By the Inventor

Colorado Springs, CO, United States of America

Damian A Carver

This inventor holds 7 USPTO granted patents. Top assignee: Atmel Corporation. Active years: 2006-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Damian A Carver. Retrieved from https://idiyas.com/inventor/damian-a-carver

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7

% Patents Active = 100.0

Average Co-Inventor Count = 2.2

ph-index = 2

Forward Citations = 75(Granted Patents)


Location History:

  • Santa Clara, CA (US) (2013)
  • Colorado Springs, CO (US) (2006 - 2015)

Company Filing History:

goldMedal7 out of 1,469 
 
Atmel Corporation
 patents

Years Active: 2006-2015

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7 patents (USPTO):Explore Patents
1. 9012308 - Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto (2015-04-21),
2. 8530934 - Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto (2013-09-10),
3. 7651919 - Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization (2010-01-26),
4. 7408812 - Low-voltage single-layer polysilicon EEPROM memory cell (2008-08-05),
5. 7300849 - Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement (2007-11-27),
6. 7208795 - Low-cost, low-voltage single-layer polycrystalline EEPROM memory cell integration into BiCMOS technology (2007-04-24),
7. 7144775 - Low-voltage single-layer polysilicon eeprom memory cell (2006-12-05),

Title: The Innovations of Damian A Carver

Introduction

Damian A Carver is a prominent inventor based in Colorado Springs, CO (US). He has made significant contributions to the field of electronic devices, holding a total of 7 patents. His work focuses on advanced semiconductor technologies that enhance the performance and efficiency of electronic components.

Latest Patents

One of his latest patents involves integrated circuit structures containing a strain-compensated compound semiconductor layer. This patent describes a method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into electronic devices, such as SiGe NPN HBTs. The invention also applies to strained layers in various electronic devices, including strained SiGe, Si in MOS applications, and vertical thin film transistors (VTFT). Additionally, devices formed from other compound semiconductors, such as GaAs, InP, and AlGaAs, can benefit from the processes described in his patents.

Career Highlights

Damian A Carver is currently associated with Atmel Corporation, where he continues to innovate in the field of semiconductor technology. His expertise has led to advancements that are crucial for the development of modern electronic devices.

Collaborations

Throughout his career, Damian has collaborated with notable colleagues, including Darwin Gene Enicks and Muhammad I Chaudhry. These collaborations have further enriched his work and contributed to the success of various projects.

Conclusion

Damian A Carver's contributions to the field of electronics through his innovative patents and collaborations highlight his role as a key figure in advancing semiconductor technology. His work continues to influence the development of efficient electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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