The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
Nov. 04, 2005
Applicants:
Darwin Gene Enicks, Colorado Springs, CO (US);
Damian Carver, Colorado Springs, CO (US);
Inventors:
Darwin Gene Enicks, Colorado Springs, CO (US);
Damian Carver, Colorado Springs, CO (US);
Assignee:
Atmel Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a heterojunction bipolar transistor (HBT) is provided. The method includes providing a substrate including a collector region; forming a compound base region over the collector region; forming a cap layer overlying the compound base region including doping the cap layer with a pre-determined percentage of at least one element associated with the compound base region; and forming an emitter region over the cap layer.