The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Oct. 11, 2010
Darwin G. Enicks, Painted Post, NY (US);
John Taylor Chaffee, Colorado Springs, CO (US);
Damian A. Carver, Santa Clara, CA (US);
Darwin G. Enicks, Painted Post, NY (US);
John Taylor Chaffee, Colorado Springs, CO (US);
Damian A. Carver, Santa Clara, CA (US);
Atmel Corporation, San Jose, CA (US);
Abstract
A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained SiGe, Si in MOS applications, vertical thin film transistors (VTFT), and a variety of other electronic device types. Devices formed from compound semiconductors other than SiGe, such as, for example, GaAs, InP, and AlGaAs are also amenable to beneficial processes described herein.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile