Daizo Horie

Title: Daizo Horie: Innovator in Semiconductor Technology

Introduction

Daizo Horie is a prominent inventor based in Tokyo, Japan, known for his contributions to semiconductor technology. With a total of three patents to his name, Horie has made significant advancements in the field of epitaxial growth methods.

Latest Patents

Horie's latest patents focus on an innovative epitaxial growth method. This method involves growing an epitaxial film on the surface of a semiconductor wafer by mounting the wafer within a specially designed susceptor pocket. The process includes supplying source gas and carrier gas to the upper surface of the susceptor while also providing carrier gas to the lower surface. The susceptor features a circular bottom wall and a sidewall that forms a pocket for the wafer. Notably, a series of circular through-holes are created in the bottom wall, allowing for optimal gas flow. The total opening surface area of these through-holes ranges from 0.05 to 55% of the bottom wall's surface area, with each hole measuring between 0.2 to 3.2 mm in diameter and a density of 0.25 to 25 per cm.

Career Highlights

Throughout his career, Daizo Horie has worked with notable companies in the semiconductor industry, including Sumco Corporation and Sumitomo Mitsubishi Silicon Corporation. His experience in these organizations has contributed to his expertise and innovative capabilities in semiconductor technology.

Collaborations

Horie has collaborated with esteemed colleagues such as Masayuki Ishibashi and John F. Krueger, further enhancing his work in the field.

Conclusion

Daizo Horie's contributions to semiconductor technology, particularly through his innovative epitaxial growth methods, highlight his role as a significant inventor in the industry. His work continues to influence advancements in semiconductor manufacturing processes.