logo

For the Inventor, By the Inventor

Kokubunji, Japan

Dai Hisamoto

This inventor holds 8 USPTO granted patents. Top assignee: Hitachi, Ltd.. Active years: 1992-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dai Hisamoto. Retrieved from https://idiyas.com/inventor/dai-hisamoto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8

% Patents Active = 62.5

Average Co-Inventor Count = 3.4

ph-index = 7

Forward Citations = 498(Granted Patents)


Location History:

  • Kokubunji, JP (1992 - 1996)
  • Kodaira, JP (2003 - 2005)

Company Filing History:

goldMedal8 out of 42,731 
 
Hitachi, Ltd.
 patents

Years Active: 1992-2005

Loading Chart...
8 patents (USPTO):Explore Patents
1. 6873009 - Vertical semiconductor device with tunnel insulator in current path controlled by gate electrode (2005-03-29),
2. 6861304 - Semiconductor integrated circuit device and method of manufacturing thereof (2005-03-01),
3. 6504755 - Semiconductor memory device (2003-01-07),
4. 5523965 - Semiconductor memory device and method of manufacturing same (1996-06-04),
5. 5466621 - Method of manufacturing a semiconductor device having silicon islands (1995-11-14),
6. 5355330 - Capacitive memory having a PN junction writing and tunneling through an (1994-10-11),
7. 5346834 - Method for manufacturing a semiconductor device and a semiconductor (1994-09-13),
8. 5115289 - Semiconductor device and semiconductor memory device (1992-05-19),

Title: Dai Hisamoto: Innovator in Semiconductor Technology

Introduction

Dai Hisamoto is a prominent inventor based in Kokubunji, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on developing advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Hisamoto's latest patents include a vertical semiconductor device with a tunnel insulator in the current path controlled by a gate electrode. This invention aims to provide a field effect transistor with extremely low leakage current. It also seeks to create a semiconductor memory device with excellent information holding characteristics. Another notable patent is for a semiconductor integrated circuit device and method of manufacturing it. This device integrates multiple field effect transistors with different threshold values on a single chip, achieved by varying the germanium content in the gate electrode material.

Career Highlights

Dai Hisamoto is currently employed at Hitachi, Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Hisamoto has collaborated with notable colleagues, including Eiji Takeda and Toru Kaga. These partnerships have contributed to the successful development of his innovative technologies.

Conclusion

Dai Hisamoto's contributions to semiconductor technology have established him as a key figure in the field. His patents reflect a commitment to innovation and excellence, paving the way for future advancements in electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…