The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1992
Filed:
Aug. 05, 1991
Dai Hisamoto, Kokubunji, JP;
Toru Kaga, Urawa, JP;
Shinichiro Kimura, Hachioji, JP;
Masahiro Moniwa, Hannou, JP;
Haruhiko Tanaka, Kokubunji, JP;
Atsushi Hiraiwa, Kodaira, JP;
Eiji Takeda, Koganei, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device, such as an FET or a charge coupled device, is provided having a channel or a charge coupled portion formed in a thin semiconductor layer which is substantially perpendicular to the substrate. Necessary electrodes, such as the gate electrode, and necessary insulating layers can be added at the thin semiconductor layer, and can maintain the necessary amount of electric current by securing the height of the semiconductor layer. The structure has the advantage that it can have its plane size reduced. Further, the semiconductor memory device using the above semiconductor device is suitable to high integration and has excellent electric characteristics.