The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Feb. 04, 2003
Applicants:
Dai Hisamoto, Kodaira, JP;
Tsuyoshi Kachi, Kokubunji, JP;
Inventors:
Dai Hisamoto, Kodaira, JP;
Tsuyoshi Kachi, Kokubunji, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ; H01L021/8234 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor integrated circuit device wherein plural field effect transistors having different threshold values are integrated on one chip by forming plural gate electrodes of silicon-germanium mixed crystals having different germanium contents. By varying the germanium content of the gate electrode material, a work function with respect to the channel region can be varied, so a semiconductor integrated circuit device wherein plural field effect transistors having different threshold voltage values are integrated on one chip can be manufactured.