The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 1995
Filed:
Oct. 25, 1993
Dai Hisamoto, Kokubunji, JP;
Toru Kaga, Urawa, JP;
Shinichiro Kimura, Hachioji, JP;
Masahiro Moniwa, Hannou, JP;
Haruhiko Tanaka, Kokubunji, JP;
Atsushi Hiraiwa, Kodaira, JP;
Eiji Takeda, Koganei, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device such as FET or charge coupled device, having a channel or a charge coupled portion provided in a thin semiconductor layer which is nearly perpendicular to the substrate and to which the necessary electrode such as the gate electrode and the necessary insulating layer are added can maintain the necessary amount of electric current by securing the height of the semiconductor layer and also can have its plane size reduced minutely. Further, the semiconductor memory device using the above semiconductor device is suitable to high integration and has excellent electric characteristics.