Yongin-si, South Korea

Daeyoung Moon

USPTO Granted Patents = 10 

Average Co-Inventor Count = 6.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Yongin-si, KR (2019 - 2023)
  • Seoul, KR (2023)

Company Filing History:


Years Active: 2019-2025

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10 patents (USPTO):Explore Patents

Title: The Innovations of Daeyoung Moon

Introduction

Daeyoung Moon is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work primarily focuses on advancements in memory devices, which are crucial for modern electronic applications.

Latest Patents

One of Daeyoung Moon's latest patents is for a semiconductor memory device and method for manufacturing the same. This innovative device includes a substrate with defined cell and peripheral areas, featuring a dummy cell area and a normal cell area. The design incorporates a cell area separation film and a normal bit-line that extends in a specific direction, enhancing the efficiency of memory storage.

Another notable patent is for a dual-port static random access memory (SRAM) cell. This design includes P-type active patterns that are strategically spaced apart, each containing at least one transistor. The arrangement of these patterns allows for improved performance and functionality in memory applications.

Career Highlights

Daeyoung Moon is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role involves pioneering research and development in semiconductor memory technologies, contributing to the company's reputation for innovation and excellence.

Collaborations

Throughout his career, Daeyoung Moon has collaborated with talented individuals such as Sang-Yeop Baeck and Tae-Hyung Kim. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Daeyoung Moon's contributions to semiconductor technology through his patents and collaborations highlight his importance in the field of innovation. His work continues to influence advancements in memory devices, shaping the future of electronic applications.

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