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For the Inventor, By the Inventor

Yongin, South Korea

Dae-Seok Byeon

This inventor holds 44 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Flash Memory Technology. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2003-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dae-Seok Byeon. Retrieved from https://idiyas.com/inventor/dae-seok-byeon-0rhxj1b5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 44 

% Patents Active = 86.4


Average Co-Inventor Count = 1.8

ph-index = 11

Forward Citations = 421(Granted Patents)


Location History:

  • Seoul, KR (2003 - 2005)
  • Youngin, KR (2007)
  • Yongin-si, KR (2006 - 2011)
  • Gyeonggi-do, KR (2006 - 2011)
  • Hwaseong-si, KR (2019)

Company Filing History:

goldMedal44 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2003-2019

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Areas of Expertise:
Flash Memory Device
Programming Methods
High Voltage Circuit
Non-Volatile Memory
Multi-Chip Package
Voltage Reset Circuit
NAND Flash Memory
Wordline Voltage
Voltage Regulator
Coupling Noise
Power Detecting Circuit
44 patents (USPTO):Explore Patents
1. 10170190 - Memory controller having reclaim controller and method of controlling operation of the memory controller (2019-01-01),
2. 8045380 - Flash memory device and program method of flash memory device using different voltages (2011-10-25),
3. 7957201 - Flash memory device operating at multiple speeds (2011-06-07),
4. 7911850 - Method of programming flash memory device (2011-03-22),
5. 7898871 - Flash memory device operating at multiple speeds (2011-03-01),
6. 7852682 - Flash memory device and program method of flash memory device using different voltages (2010-12-14),
7. 7843758 - Multi-chip package flash memory device and method for reading status data therefrom (2010-11-30),
8. 7800971 - Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats (2010-09-21),
9. 7697342 - Flash memory device and related high voltage generating circuit (2010-04-13),
10. 7692967 - Method of programming a nonvolatile memory device using hybrid local boosting (2010-04-06),
11. 7668019 - Non-volatile memory device and erasing method thereof (2010-02-23),
12. 7660155 - Non-volatile memory device and method of driving the same (2010-02-09),
13. 7649785 - Flash memory device and related high voltage generating circuit (2010-01-19),
14. 7596022 - Method for programming a multi-level non-volatile memory device (2009-09-29),
15. 7580284 - Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats (2009-08-25),

Title: The Innovative Journey of Dae-Seok Byeon

Introduction: Dae-Seok Byeon is a pioneering inventor hailing from Yongin-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Dae-Seok Byeon holds several patents in the realm of electronics and telecommunications, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Dae-Seok Byeon has worked tirelessly to develop cutting-edge solutions that have revolutionized the industry. His innovative mindset and passion for creating have led to the successful implementation of numerous projects.

Collaborations: Throughout his career, Dae-Seok Byeon has collaborated with leading tech companies and research institutions, fostering a culture of innovation and knowledge-sharing. His ability to work in diverse teams has resulted in the development of impactful technologies.

Conclusion: Dae-Seok Byeon's relentless pursuit of innovation and his commitment to excellence have solidified his position as a prominent figure in the world of inventors. His work continues to inspire future generations to push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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