The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Aug. 30, 2007
Dong-hyuk Chae, Seoul, KR;
Dae-seok Byeon, Yongin-si, KR;
Dong-Hyuk Chae, Seoul, KR;
Dae-Seok Byeon, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A method for programming multi-level non-volatile memory. A plurality of multi-bit storage cells capable of storing different levels of charge usable to represent data represented by a least significant bits (LSBs) and a most significant bits (MSBs) are programmed first with LSBs and then with MSBs. The programmed storage cells have a threshold voltage lower than a voltage VRto store a first value, greater than VRand lower than a voltage VRto store a second value, and greater than VRand lower than a voltage VRto store a third value. Each of the cells has a threshold voltage greater than a voltage VRwhen it is desired that the storage cell store a fourth value. VRis less than VRwhich is less than VR. The flag cell is programmed to have a threshold voltage greater than VRto indicate that the MSBs have been programmed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile