Method of programming a nonvolatile memory device using hybrid local boosting

Abstract

A method of programming a nonvolatile memory device using hybrid local boosting which includes a plurality of cell strings each having a plurality of electrically erasable and programmable memory cells connected in series and a plurality of wordlines respectively connected to control gates of the plurality of memory cells. The address of a selected cell that is to be programmed is received. A determination is made as to whether a selected wordline connected to the selected cell is located above or under a reference wordline based on the received address. The selected cell is programmed using local boosting when the selected wordline corresponds to the reference wordline or is located above the reference wordline. The selected cell is programmed using self-boosting when the selected wordline is located under the reference wordline. The programming method reduces circuit size of a nonvolatile memory device employing the programming method and efficiently prevents program disturbance due to charge sharing.