Company Filing History:
Years Active: 1991-2018
Title: The Innovative Contributions of Curtis H Rahn
Introduction
Curtis H Rahn is a notable inventor based in Plymouth, MN (US), recognized for his significant contributions to the field of pressure sensors. With a total of 11 patents to his name, Rahn has made substantial advancements in sensor technology, particularly in silicon-on-insulator (SOI) MEMS pressure sensors.
Latest Patents
Among his latest patents, one is titled "Integrated SOI pressure sensor having silicon stress isolation member." This invention features a pressure sensor that includes a housing with an input port for media entry. It also incorporates a support within the housing that defines an aperture, along with a stress isolation member made of silicon. The sensor die is bonded to this member, showcasing advanced design and functionality. Another notable patent is "Apparatus and processes for silicon on insulator MEMS pressure sensors." This patent outlines methods for doping a silicon-on-insulator wafer with Boron atoms, enhancing the performance of the sensor layer.
Career Highlights
Curtis H Rahn has had a distinguished career, working with prominent companies such as Honeywell International Inc. and Honeywell GmbH. His experience in these organizations has allowed him to develop and refine his innovative ideas in sensor technology.
Collaborations
Throughout his career, Rahn has collaborated with esteemed colleagues, including Gregory C Brown and Roger L Roisen. These partnerships have contributed to the successful development of his patented technologies.
Conclusion
Curtis H Rahn's work in the field of pressure sensors exemplifies innovation and dedication. His patents and collaborations reflect a commitment to advancing technology in meaningful ways.