The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2014

Filed:

Mar. 05, 2012
Applicants:

Gregory C. Brown, Chanhassen, MN (US);

Curtis Rahn, Plymouth, MN (US);

Inventors:

Gregory C. Brown, Chanhassen, MN (US);

Curtis Rahn, Plymouth, MN (US);

Assignee:

Honeywell International Inc., Morristown, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

System and methods for silicon on insulator MEMS pressure sensors are provided. In one embodiment, a method comprises: applying a doping source to a silicon-on-insulator (SOI) silicon wafer having a sensor layer and an insulating layer comprising SiOmaterial; doping the silicon wafer with Boron atoms from the doping source while controlling an injection energy of the doping to achieve a top-heavy ion penetration profile; and applying a heat source to diffuse the Boron atoms throughout the sensor layer of the SOI silicon wafer.


Find Patent Forward Citations

Brown, Gregory. (2014). Apparatus and processes for silicon on insulator mems pressure sensors (U.S. Patent No. 8813580). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8813580

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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