The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2005

Filed:

Jun. 17, 2002
Applicants:

Thomas G. Stratton, Roseville, MN (US);

Gary R. Gardner, Golden Valley, MN (US);

Curtis H. Rahn, Plymouth, MN (US);

Inventors:

Thomas G. Stratton, Roseville, MN (US);

Gary R. Gardner, Golden Valley, MN (US);

Curtis H. Rahn, Plymouth, MN (US);

Assignee:

Honeywell International, Inc., Morristown, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L027/14 ; H01L029/82 ;
U.S. Cl.
CPC ...
Abstract

A microelectromechanical device and method of fabricating the same, including a layer of patterned and deposited metal or mechanical-quality, doped polysilicon inserted between the appropriate device element layers, which provides a conductive layer to prevent the microelectromechanical device's output from drifting. The conductive layer may encapsulate of the device's sensing or active elements, or may selectively cover only certain of the device's elements. Further, coupling the metal or mechanical-quality, doped polysilicon to the same voltage source as the device's substrate contact may place the conductive layer at the voltage of the substrate, which may function as a Faraday shield, attracting undesired, migrating ions from interfering with the output of the device.


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