The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
Jan. 02, 1990
Applicant:
Inventors:
Gordon A. Shaw, Plymouth, MN (US);
Curtis H. Rahn, Plymouth, MN (US);
Cheisan Yue, Roseville, MN (US);
Todd A. Randazzo, Savage, MN (US);
Assignee:
Honeywell Inc., Morristown, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1338 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1338 ;
Abstract
A process for oxidizing the silicon layer into a device-isolating field oxide having a radiation-hardened reduced bird's beak. An angled and rotated field implant prior to oxidation is used to increase the doping concentration in the edge region of the MOS transistors to compensate for boron leaching during oxidation. The field oxide is grown at a low temperature by high pressure oxidation which increases total dose hardness by making a silicon-rich oxide film.