The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2009

Filed:

Jan. 17, 2006
Applicants:

Gregory C. Brown, Chanhassen, MN (US);

Curtis H. Rahn, Plymouth, MN (US);

Inventors:

Gregory C. Brown, Chanhassen, MN (US);

Curtis H. Rahn, Plymouth, MN (US);

Assignee:

Honeywell International Inc., Morristown, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of electrically isolating a MEMS device is provided. In one example, a piezo-resistive pressure sensor having an exposed silicon region undergoes a Local Oxidation of Silicon (LOCOS) process. An electrically insulating structure is created in the LOCOS process. The insulating structure has a rounded, or curved, interface with the piezo-resistive pressure sensor. The curved interface mitigates stresses associated with exposure to high temperatures and pressures. Additionally, the electrically insulating line may be patterned so that it has curved angles, further mitigating stress.


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