Chunyuan Qi

Title: Chunyuan Qi: Innovator in Semiconductor Technology

Introduction

Chunyuan Qi is a prominent inventor based in Singapore, known for his contributions to semiconductor technology. With a total of 3 patents, he has made significant advancements in the field, particularly in silicon-on-insulator substrates and semiconductor structures.

Latest Patents

Chunyuan Qi's latest patents include a novel silicon-on-insulator substrate and a method of manufacturing the same. This invention features a handler, a polysilicon trap-rich layer, an oxide layer, and a monocrystalline silicon layer, with a bonding interface between the monocrystalline silicon layer and the oxide layer. Additionally, he has developed a semiconductor structure that comprises a carrier substrate, a trap-rich layer, a dielectric layer, an interconnect structure, a device structure layer, and a circuit structure, all designed to enhance the performance and efficiency of semiconductor devices.

Career Highlights

Chunyuan Qi is currently employed at United Microelectronics Corporation, where he continues to innovate and push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of modern electronic devices.

Collaborations

Chunyuan has collaborated with notable colleagues such as Sheng Zhang and Xingxing Chen, contributing to a dynamic and innovative work environment.

Conclusion

Chunyuan Qi's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic components.