The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Jul. 22, 2021
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Sheng Zhang, Singapore, SG;

Chunyuan Qi, Singapore, SG;

Xingxing Chen, Singapore, SG;

Chien-Kee Pang, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/76256 (2013.01); H01L 21/84 (2013.01); H01L 21/02274 (2013.01);
Abstract

Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a carrier substrate, a trap-rich layer, a dielectric layer, an interconnect structure, a device structure layer and a circuit structure. The trap-rich layer is disposed on the carrier substrate. The dielectric layer is disposed on the trap-rich layer. The interconnect structure is disposed on the dielectric layer. The device structure layer is disposed on the interconnect structure and electrically connected to the interconnect structure. The circuit structure is disposed on the device structure layer and electrically connected to the device structure layer.


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