The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Oct. 26, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chunyuan Qi, Singapore, SG;
Sheng Zhang, Singapore, SG;
Xingxing Chen, Singapore, SG;
Chien-Kee Pang, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/83 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6744 (2025.01); H10D 30/751 (2025.01); H10D 62/83 (2025.01);
Abstract
An silicon-on-insulator substrate is provided in the present invention, including a handler, a polysilicon trap-rich layer formed on the handler, an oxide layer formed on the polysilicon trap-rich layer and a monocrystalline silicon layer formed directly on the oxide layer, wherein a bonding interface is between the monocrystalline silicon layer and the oxide layer.