Chung-Tse Chen

Title: Innovations of Chung-Tse Chen

Introduction

Chung-Tse Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. With a total of 3 patents, his work focuses on enhancing memory devices and their fabrication methods.

Latest Patents

Chung-Tse Chen's latest patents include a semiconductor memory device and a fabrication method thereof. The semiconductor memory device comprises a substrate, a dielectric layer on the substrate, and a contact plug within the dielectric layer. An upper portion of the contact plug protrudes from the top surface of the dielectric layer, acting as a first electrode. Additionally, a buffer layer is positioned on the dielectric layer adjacent to the upper portion of the contact plug. A resistive-switching layer is placed beside the buffer layer, with a second electrode located next to the resistive-switching layer. His method for fabricating memory devices involves forming a transistor on a substrate, creating a contact structure on the source/drain region of the transistor, and forming a conductive layer on the contact structure. Four memory structures are then established on the conductive layer to create a quadrilateral structure.

Career Highlights

Chung-Tse Chen is currently employed at United Microelectronics Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing memory device capabilities.

Collaborations

Chung-Tse Chen collaborates with talented coworkers, including Ko-Chi Chen and Tzu-Yun Chang, contributing to a dynamic and innovative work environment.

Conclusion

Chung-Tse Chen's contributions to semiconductor memory devices and their fabrication methods highlight his role as a leading inventor in the field. His ongoing work at United Microelectronics Corporation continues to push the boundaries of technology.