The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Apr. 07, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Wen-Hsin Hsu, Chiayi, TW;
Ko-Chi Chen, Taoyuan, TW;
Tzu-Yun Chang, Hsinchu County, TW;
Chung-Tse Chen, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/20 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/80 (2023.02); H10B 63/30 (2023.02); H10N 70/041 (2023.02); H10N 70/24 (2023.02); H10N 70/8833 (2023.02);
Abstract
A semiconductor memory device includes a substrate, a dielectric layer on the substrate, and a contact plug in the dielectric layer. An upper portion of the contact plug protrudes from a top surface of the dielectric layer. The upper portion of the contact plug acts as a first electrode. A buffer layer is disposed on the dielectric layer and beside the upper portion of the contact plug. A resistive-switching layer is disposed beside the buffer layer. A second electrode is disposed beside the resistive-switching layer.