United Microelectronics Corp.

Chung-Tse Chen

Ko-Chi Chen

Tzu-Yun Chang

Wen-Hsin Hsu

A semiconductor memory device includes a substrate, a dielectric layer on the substrate, and a contact plug in the dielectric layer. An upper portion of the contact plug protrudes from a top surface of the dielectric layer. The upper portion of the contact plug acts as a first electrode. A buffer layer is disposed on the dielectric layer and beside the upper portion of the contact plug. A resistive-switching layer is disposed beside the buffer layer. A second electrode is disposed beside the resistive-switching layer.

Semiconductor memory device and fabrication method thereof

A method for fabricating memory device is provided. The method includes forming a transistor on a substrate. Further, a contact structure is formed on a source/drain region of the transistor. A conductive layer is formed on the contact structure. Four memory structures are formed on the conductive layer to form a quadrilateral structure.

Method for fabricating memory device

A structure of memory device is provided. The structure of memory device includes a transistor formed on a substrate. A contact structure is disposed on a source/drain region of the transistor. A conductive layer is disposed on the contact structure. Four memory structures is disposed on the conductive layer to form a quadrilateral structure.

Growing community of inventors

Hsinchu, Taiwan

Chung-Tse Chen