Chung-Ping Eng

Title: Innovations of Chung-Ping Eng

Introduction

Chung-Ping Eng is a notable inventor based in Hopewell Junction, NY (US). He has made significant contributions to the field of technology, particularly in the area of semiconductor materials and processes. With a total of 5 patents to his name, Eng has demonstrated a commitment to advancing innovation in his field.

Latest Patents

One of Eng's latest patents is the HDP-based ILD capping layer. This invention features a cap nitride stack that prevents etch penetration to the HDP nitride while maintaining the electromigration benefits of HDP nitride atop copper. In one embodiment, the stack comprises a first layer of HDP nitride and a second layer of a Si—C—H compound disposed over the first layer. The Si—C—H compound can be BLoK or N-BLoK (Si—C—H—N) and is selected from a group of materials that exhibit high selectivity during via RIE, ensuring that RIE chemistry from the next wiring level does not punch through. Carbon and nitrogen are the key elements in this innovative design. In another embodiment, the stack includes a first layer of HDP nitride, followed by a second layer of UVN (a plasma nitride), and a third layer comprising HDP nitride disposed over the second layer.

Career Highlights

Chung-Ping Eng is currently employed at International Business Machines Corporation (IBM), where he continues to work on cutting-edge technologies. His expertise in semiconductor materials has positioned him as a valuable asset to the company and the industry at large.

Collaborations

Eng has collaborated with notable coworkers, including Yun-Yu Wang and Richard Anthony Conti. These partnerships have contributed to the development of innovative solutions in their respective fields.

Conclusion

Chung-Ping Eng's contributions to technology through his patents and work at IBM highlight his role as a significant inventor in the semiconductor industry. His innovative approaches continue to influence advancements in technology.