The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2006
Filed:
Dec. 01, 2004
Yun-yu Wang, Poughquag, NY (US);
Richard A. Conti, Katonah, NY (US);
Chung-ping Eng, Hopewell Junction, NY (US);
Matthew C. Nicholls, Pleasant Valley, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Richard A. Conti, Katonah, NY (US);
Chung-Ping Eng, Hopewell Junction, NY (US);
Matthew C. Nicholls, Pleasant Valley, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A cap nitride stack which prevents etch penetration to the HDP nitride while maintaining the electromigration benefits of HDP nitride atop Cu. In one embodiment, the stack comprises a first layer of HDP nitride and a second layer of a Si—C—H compound disposed over the first layer. The Si—C—H compound is for example BLoK, or N-BLoK (Si—C—H—N), and is selected from a group of materials that has high selectivity during via RIE such that RIE chemistry from the next wiring level does not punch through. Carbon and nitrogen are the key elements. In another embodiment, the stack comprises a first layer of HDP nitride, followed by a second layer of UVN (a plasma nitride), and a third layer comprising HDP nitride disposed over the second layer.