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For the Inventor, By the Inventor

Changhua, Taiwan

Chun-Han Chen

This inventor holds 18 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., National Taiwan University. Active years: 2015-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chun-Han Chen. Retrieved from https://idiyas.com/inventor/chun-han-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 94.4

Average Co-Inventor Count = 4.7

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Changhua, TW (2015 - 2024)
  • Changhua County, TW (2022 - 2024)

Company Filing History:

goldMedal17 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 1,395 
 
National Taiwan University
 patents

Years Active: 2015-2025

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Areas of Expertise:
Semiconductor Devices
Capacitance Reduction
Field-Effect Transistors
FinFET
Image Sensors
Device Structures
Gas Detection
Radiation Emitting
18 patents (USPTO):Explore Patents
1. 12317538 - Semiconductor devices (2025-05-27),
2. 12165929 - Semiconductor device and method (2024-12-10),
3. 12068396 - Parasitic capacitance reduction (2024-08-20),
4. 12057488 - Methods of reducing capacitance in field-effect transistors (2024-08-06),
5. 11935932 - Semiconductor device and method (2024-03-19),
6. 11757022 - Parasitic capacitance reduction (2023-09-12),
7. 11532507 - Semiconductor device and method (2022-12-20),
8. 11489053 - Semiconductor device and method (2022-11-01),
9. 11450572 - Semiconductor device and method (2022-09-20),
10. 11374104 - Methods of reducing capacitance in field-effect transistors (2022-06-28),
11. 11302802 - Parasitic capacitance reduction (2022-04-12),
12. 11264383 - Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same (2022-03-01),
13. 10943818 - Semiconductor device and method (2021-03-09),
14. 10797050 - Fin field effect transistor (finFET) device structure with capping layer and method for forming the same (2020-10-06),
15. 10475788 - Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same (2019-11-12),

Title: The Innovative Journey of Inventor Chun-Han Chen

Introduction: Chun-Han Chen, a talented inventor hailing from Changhua, Taiwan, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Chun-Han Chen holds several patents in various technological domains, showcasing his versatility and ingenuity in inventing new solutions to complex problems.

Career Highlights: Throughout his career, Chun-Han Chen has demonstrated a remarkable ability to innovate and create novel technologies that have had a positive impact on industries worldwide. His dedication to pushing the boundaries of what is possible has earned him recognition as a leading figure in the world of inventions.

Collaborations: Chun-Han Chen has collaborated with numerous companies, research institutions, and fellow inventors to bring his ideas to life. His ability to work effectively in a team setting has led to the successful development and implementation of groundbreaking technologies.

Conclusion: In conclusion, Chun-Han Chen's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor. His contributions to the world of technology continue to inspire and shape the future of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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