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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10797050 B1

PDFFull Text
Date of Patent:
Oct. 06, 2020

Filed:

Oct. 08, 2019

Fin field effect transistor (finfet) device structure with capping layer and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Han Chen, Changhua, TW;

Chen-Ming Lee, Yangmei, TW;

Fu-Kai Yang, Hsinchu, TW;

Mei-Yun Wang, Chupei, TW;

Jr-Hung Li, Chupei, TW;

Bo-Cyuan Lu, New Taipei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Changhyun Yi

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823431 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract

A FinFET device structure is provided. The FinFET device structure includes a first gate structure formed over a fin structure, and a first capping layer formed over the first gate structure. The FinFET device structure includes a first etching stop layer formed over the first capping layer and the first gate structure, and a top surface and a sidewall surface of the first capping layer are in direct contact with the first etching stop layer.

Find Patent Forward Citations

Chen, Chun-Han. (2020). Fin field effect transistor (finfet) device structure with capping layer and method for forming the same (U.S. Patent No. 10797050). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10797050

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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