The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Sep. 30, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chun-Han Chen, Changhua County, TW;
Chen-Ming Lee, Taoyuan County, TW;
Fu-Kai Yang, Hsinchu, TW;
Mei-Yun Wang, Hsin-Chu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/511 (2013.01); H01L 21/02271 (2013.01); H01L 21/31053 (2013.01); H01L 29/401 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor structure includes a fin protruding from a substrate, a first and a second metal gate stacks disposed over the fin, and a dielectric feature defining a sidewall of each of the first and the second metal gate stacks. Furthermore, the dielectric feature includes a two-layer structure, where sidewalls of the first layer are defined by the second layer, and where the first and the second layers have different compositions.