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For the Inventor, By the Inventor

Unterhaching, Germany

Christine Fellinger

This inventor holds 11 USPTO granted patents. Top assignee: Siemens Aktiengesellschaft. Active years: 1986-1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Christine Fellinger. Retrieved from https://idiyas.com/inventor/christine-fellinger

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11

% Patents Active = 100.0

Average Co-Inventor Count = 3.5

ph-index = 6

Forward Citations = 231(Granted Patents)


Location History:

  • Munich, DE (1986 - 1987)
  • Unterhaching, DE (1987 - 1992)

Company Filing History:

goldMedal11 out of 30,886 
 
Siemens Aktiengesellschaft
 patents

Years Active: 1986-1992

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11 patents (USPTO):Explore Patents
1. 5132766 - Bipolar transistor electrode (1992-07-21),
2. 4801824 - Integrable buffer circuit for voltage level conversion having clamping (1989-01-31),
3. 4730228 - Overtemperature detection of power semiconductor components (1988-03-08),
4. 4728826 - MOSFET switch with inductive load (1988-03-01),
5. 4691129 - Drive circuit for a power MOSFET with source-side load (1987-09-01),
6. 4688071 - Circuit arrangement comprising a phototransistor (1987-08-18),
7. 4677325 - High voltage MOSFET switch (1987-06-30),
8. 4672738 - Method for the manufacture of a pn junction with high breakdown voltage (1987-06-16),
9. 4633292 - Semiconductor component with planar structure (1986-12-30),
10. 4578596 - Circuit arrangement for driving a thyristor with a phototransistor (1986-03-25),
11. 4578595 - Circuit arrangement for drive of a thyristor with light (1986-03-25),

Title: Christine Fellinger: Innovator in Semiconductor Technology

Introduction

Christine Fellinger is a prominent inventor based in Unterhaching, Germany. She has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. Her work focuses on advancements that enhance the performance and efficiency of electronic components.

Latest Patents

Among her latest patents is a design for a bipolar transistor electrode. This invention includes a semiconductor body with a cathode-side surface and an anode-side surface, featuring at least one insulated gate electrode. The semiconductor body has a central region with a specific doping concentration and a first conductivity type. Additionally, she has developed an integrable buffer circuit for voltage level conversion that includes clamping. This circuit is designed to convert a signal voltage based on a supply voltage to a ground-referenced signal voltage, facilitating further processing in logic circuits.

Career Highlights

Christine Fellinger is currently employed at Siemens Aktiengesellschaft, where she continues to innovate and contribute to the field of electronics. Her expertise in semiconductor technology has positioned her as a key player in the industry.

Collaborations

Throughout her career, Christine has collaborated with notable colleagues, including Ludwig Leipold and Jenoe Tihanyi. These partnerships have fostered a collaborative environment that enhances innovation and development in her projects.

Conclusion

Christine Fellinger exemplifies the spirit of innovation in semiconductor technology through her patents and contributions at Siemens. Her work continues to influence the advancement of electronic components, showcasing her dedication to the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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