Munich, Germany

Christian Penzkofer


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2012-2014

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2 patents (USPTO):Explore Patents

Title: **Inventor Christian Penzkofer: Pioneering Electron Beam Technology**

Introduction

Christian Penzkofer, a distinguished inventor based in Munich, Germany, has contributed significantly to the field of electron beam technology. With two notable patents to his name, Penzkofer is recognized for his innovative approaches that enhance the functionality and design of electron beam sources.

Latest Patents

One of Penzkofer's key innovations is in his patent titled "Electron beam source and method of manufacturing the same." This invention describes a specialized tip for an electron beam source, which comprises a core that carries a coating. Notably, the coating material boasts greater electrical conductivity compared to the material forming the surface of the core. This advancement not only improves the efficiency of electron beam sources but also contributes to the technological evolution in this domain.

Career Highlights

Throughout his career, Christian Penzkofer has collaborated with leading companies, including Carl Zeiss NTS GmbH and Nanotools GmbH. His work in these prestigious organizations has solidified his reputation as a skilled inventor and innovator in the field of electron beam technologies.

Collaborations

Penzkofer has had the opportunity to work alongside talented individuals, including coworkers Volker Drexel and Ulrich Mantz. Their combined expertise has played a critical role in the development of advanced technologies and has fostered an environment of creativity and innovation.

Conclusion

Christian Penzkofer continues to be a vital player in the realm of electron beam innovations. His contributions not only underline his individual talents as an inventor but also highlight the importance of collaboration and advanced technological research in driving progress in this exciting field.

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