Chong Chen

Title: Innovations of Chong Chen in Semiconductor Technology

Introduction

Chong Chen is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of Insulated Gate Bipolar Transistor (IGBT) devices. With a total of 2 patents, his work has garnered attention for its innovative approaches and practical applications.

Latest Patents

Chong Chen's latest patents include an IGBT device and a method for manufacturing it. The IGBT device features a super junction structure that consists of several N-type and P-type pillars arranged alternately. This design enhances the performance of the device by increasing current density, reducing on-state voltage drop, and minimizing turn-off loss. The cell unit is located in an N-type epitaxial layer above an N-type substrate, incorporating a trench gate, a P-type body region, and a source region. The innovative structure of the IGBT device positions it as a significant advancement in semiconductor technology.

Career Highlights

Chong Chen is currently employed at Shanghai Huahong Grace Semiconductor Manufacturing Corporation. His role at the company allows him to apply his expertise in semiconductor manufacturing and contribute to the development of cutting-edge technologies. His work has been instrumental in advancing the capabilities of IGBT devices, which are crucial for various electronic applications.

Collaborations

Chong Chen has collaborated with notable coworkers, including Jia Pan and Jiye Yang. Their combined efforts in research and development have led to significant advancements in semiconductor technology.

Conclusion

Chong Chen's contributions to the field of semiconductor technology, particularly through his innovative IGBT devices, highlight his role as a leading inventor in the industry. His work continues to influence the development of efficient electronic components.