The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Sep. 10, 2019
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Jiye Yang, Shanghai, CN;
Junjun Xing, Shanghai, CN;
Jia Pan, Shanghai, CN;
Hao Li, Shanghai, CN;
Yi Lu, Shanghai, CN;
Longjie Zhao, Shangahi, CN;
Xukun Zhang, Shanghai, CN;
Xuan Huang, Shanghai, CN;
Chong Chen, Shanghai, CN;
Abstract
An IGBT device comprises a super-junction structure arranged in a drift region and formed by a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed. Device cell structures of the IGBT device are formed in an N-type epitaxial layer at the tops of super-junction cells. Each device cell structure comprises a body region, a gate structure and an emitter region. N-type isolation layers having a doping concentration greater than that of the N-type epitaxial layer are formed between the bottom surfaces of the body regions and the top surfaces of the P-type pillars and are used for isolating the body regions from the P-type pillars. The super-junction structure and the N-type isolation layers can increase the current density of the device, decrease the on-state voltage drop of the device and reduce the turn-off loss of the device.