Xukun Zhang

Title: Xukun Zhang: Innovator in IGBT Technology

Introduction

Xukun Zhang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of Insulated Gate Bipolar Transistor (IGBT) devices. With a total of 2 patents, his work focuses on enhancing the performance and efficiency of these devices.

Latest Patents

Xukun Zhang's latest patents include innovative designs for IGBT devices. One of his patents describes an IGBT device that features a super-junction structure arranged in a drift region. This structure is formed by a plurality of N-type and P-type pillars that are alternately arrayed. The device cell structures are created in an N-type epitaxial layer at the tops of super-junction cells. This design allows for increased current density, reduced on-state voltage drop, and minimized turn-off loss. Another patent details a super-junction IGBT device that comprises a plurality of N-type and P-type pillars arranged horizontally. This design includes trench gates that enhance the device's on-state current capacity while reducing the on-state voltage drop.

Career Highlights

Xukun Zhang is currently employed at Shanghai Huahong Grace Semiconductor Manufacturing Corporation. His work at this company has positioned him as a key player in the semiconductor industry, where he continues to innovate and develop advanced technologies.

Collaborations

Some of his notable coworkers include Junjun Xing and Jia Pan. Their collaboration has contributed to the advancement of semiconductor technologies within their organization.

Conclusion

Xukun Zhang is a distinguished inventor whose work in IGBT technology has the potential to revolutionize the semiconductor industry. His innovative patents reflect his commitment to enhancing device performance and efficiency.