Chihhsiang Hsiao

Title: Chihhsiang Hsiao: Innovator in Protective Film Technology

Introduction

Chihhsiang Hsiao is a notable inventor based in Iwate, Japan. He has made significant contributions to the field of protective film technology, holding a total of 2 patents. His innovative methods have advanced the way protective films are formed, showcasing his expertise and creativity in the industry.

Latest Patents

Hsiao's latest patents include a method for forming a protective film. This method involves supplying a source gas containing an organic metal or semi-metal gas to a substrate with recessed shapes. The source gas adsorbs on the substrate's surface, followed by the introduction of an oxidation gas to oxidize the adsorbed source gas. This process results in the deposition of an oxidation film on the flat areas between the recessed shapes. The cycle of supplying the source gas and oxidation gas is repeated at a rate of 90 to 300 cycles per minute. Another patent focuses on a protective film forming method that deposits an oxide film of either an organic metal compound or an organic metalloid compound on a flat surface region between adjacent recessed shapes. The lateral portion of the oxide film is then removed by etching.

Career Highlights

Chihhsiang Hsiao is currently employed at Tokyo Electron Limited, a leading company in the semiconductor and electronics manufacturing industry. His work at this organization has allowed him to further develop his innovative techniques and contribute to advancements in technology.

Collaborations

Hsiao has collaborated with notable coworkers, including Yutaka Takahashi and Atsushi Endo. Their combined expertise has fostered a productive environment for innovation and development in their field.

Conclusion

Chihhsiang Hsiao's contributions to protective film technology through his patents and work at Tokyo Electron Limited highlight his role as a significant inventor in the industry. His innovative methods continue to influence advancements in the field.