The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Dec. 19, 2016
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Takeshi Kumagai, Iwate, JP;

Yutaka Takahashi, Iwate, JP;

Chihhsiang Hsiao, Iwate, JP;

Atsushi Endo, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/04 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/04 (2013.01); C23C 16/18 (2013.01); C23C 16/405 (2013.01); C23C 16/4554 (2013.01); C23C 16/4584 (2013.01); C23C 16/45551 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32366 (2013.01); H01J 37/32431 (2013.01); H01J 37/32651 (2013.01); H01J 37/32715 (2013.01); H01J 37/32779 (2013.01); H01L 21/0228 (2013.01); H01L 21/02186 (2013.01); H01L 21/0334 (2013.01);
Abstract

A method for forming a protective film is provided. In the method, a source gas containing an organic metal gas or an organic semi-metal gas is supplied to a substrate having a plurality of recessed shapes formed in a surface so as to cause the source gas to adsorb on the surface of the substrate including the plurality of recessed shapes. Then, an oxidation gas is supplied to the surface of the substrate including the plurality of recessed shapes to oxidize the source gas adsorbed on the surface of the substrate, thereby depositing an oxidation film of the organic metal or the organic semi-metal on a flat area between the plurality of recessed shapes. Supplying the source gas to the substrate and supplying the oxidation gas to the substrate are repeated at a rate in a range of 90 to 300 cycles per minute.


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