Enter inventor name

Average Co-Inventor Count = 1.6

ph-index = 22

Forward Citations = 1,646(Granted Patents)

Location History:

Taipei, TW (1992 - 1996)
Hsin-chu, TW (1994 - 2007)

Company Filing History:

25 out of 1,093

Vanguard International Semiconductor Corporation

patents

18 out of 9,152

Industrial Technology Research Institute

patents

4 out of 3,602

Macronix International Co., Ltd.

patents

Years Active: 1992-2007

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Areas of Expertise:

Transistor-Free Random Access Memory

Phase-Change Memory

Dynamic Random Access Memory

Capacitor Design

Lithography Techniques

Integrated Circuit Fabrication

High Density Memory

Self-Aligned CMOS

Polysilicon Capacitors

Thermal Processing

Vertical DRAM Technology

Chemical Mechanical Polishing

47 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7236394 - Transistor-free random access memory (2007-06-26),

2. 7180767 - Multi-level memory device and methods for programming and reading the same (2007-02-20),

3. 6850432 - Laser programmable electrically readable phase-change memory method and device (2005-02-01),

4. 6828081 - Method and system for lithography using phase-change material (2004-12-07),

5. 6479341 - Capacitor over metal DRAM structure (2002-11-12),

6. 6267821 - Substrate clamp design for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers (2001-07-31),

7. 6262449 - High density dynamic random access memory cell structure having a polysilicon pillar capacitor (2001-07-17),

8. 6218693 - Dynamic random access memory (DRAM) cell having a buried horizontal trench capacitor by a novel fabrication method (2001-04-17),

9. 6180453 - Method to fabricate a DRAM cell with an area equal to five times the minimum used feature, squared (2001-01-30),

10. 6171923 - Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor (2001-01-09),

11. 6071774 - Method for forming a capacitor with a multiple pillar structure (2000-06-06),

12. 6057573 - Design for high density memory with relaxed metal pitch (2000-05-02),

13. 5976945 - Method for fabricating a DRAM cell structure on an SOI wafer (1999-11-02),

14. 5943581 - Method of fabricating a buried reservoir capacitor structure for (1999-08-24),

15. 5933725 - Word line resistance reduction method and design for high density memory (1999-08-03),

Title: Chih-Yuan Lu: Innovator from Hsinchu

Introduction: Chih-Yuan Lu is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chih-Yuan Lu's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips for various applications.

Career Highlights: With a career spanning over two decades, Chih-Yuan Lu has worked with leading tech companies in Taiwan, spearheading research and development projects that have led to significant technological advancements in the industry.

Collaborations: Throughout his career, Chih-Yuan Lu has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and excellence in all his projects.

Conclusion: Chih-Yuan Lu's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and engineers worldwide.

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