The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Dec. 21, 1998
JanMye Sung, Yang-Mei, TW;
Chih-Yuan Lu, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Abstract
A process for fabricating a DRAM cell, with an area equal to five times the minimum feature, squared, (5F,), has been developed. The process features the use of selectively formed, N+ single crystalline, silicon plugs, on underlying source/drain regions. The N+ single crystalline, silicon plugs, epitaxial deposited, are used to connect overlying crown shaped capacitor structures, to underlying source/drain region, as well as to connect a bit line metal structure, to another source/drain region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile