JanMye Sung

Title: Innovations by JanMye Sung in DRAM Cell Fabrication

Introduction

JanMye Sung is a notable inventor based in Yang-May, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of DRAM cells. With a total of two patents to his name, his work has advanced the efficiency and effectiveness of memory storage solutions.

Latest Patents

JanMye Sung's latest patents include innovative methods for fabricating DRAM cells. The first patent describes a method for creating a DRAM cell structure with an area equal to four times the used minimum feature. This process involves vertically aligning a polysilicon word line structure with an underlying bit line structure and an overlying capacitor structure. The design reduces the area consumed by the DRAM cell structure by creating a narrow hole in the polysilicon word line structure, which, when filled with single crystalline silicon, connects the various components effectively.

The second patent focuses on a method to fabricate a DRAM cell with an area equal to five times the minimum used feature, squared. This process utilizes selectively formed N+ single crystalline silicon plugs on underlying source/drain regions. These plugs are epitaxially deposited to connect overlying crown-shaped capacitor structures to the underlying source/drain region, as well as to link a bit line metal structure to another source/drain region.

Career Highlights

JanMye Sung is currently employed at Vanguard International Semiconductor Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in enhancing the performance and scalability of DRAM technology.

Collaborations

JanMye has collaborated with Chih-Yuan Lu, contributing to advancements in semiconductor fabrication techniques.

Conclusion

JanMye Sung's contributions to DRAM cell fabrication demonstrate his expertise and commitment to innovation in the semiconductor field. His patents reflect a deep understanding of the complexities involved in memory technology, paving the way for future advancements.