Company Filing History:
Years Active: 1999-2004
Title: Innovations of Chih-Yuan Hsiao in Static-Random-Access-Memory Technology
Introduction
Chih-Yuan Hsiao is a prominent inventor based in Feng Shan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of static-random-access-memory (SRAM) systems. With a total of 7 patents to his name, Hsiao's work has had a substantial impact on memory technology.
Latest Patents
One of Hsiao's latest patents is focused on a method for forming transistors in static-random-access-memory. This method involves several steps, including providing a substrate that consists of a cell area and a periphery area. The cell area includes various P-type and N-type regions, while the periphery area contains numerous periphery P-type and N-type regions. The process includes covering specific regions with photoresist, forming N-type sources and drains, and performing a large angle implanting process to create P-type enlarged drains. Another notable patent is for a four-transistor SRAM cell, which features two word line terminals and multiple transistors that work together to control the state of the memory cell independently.
Career Highlights
Chih-Yuan Hsiao is currently employed at United Microelectronics Corporation, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of SRAM systems, making them more efficient and reliable.
Collaborations
Hsiao has collaborated with several notable professionals in his field, including Hua-Chou Tseng and Po-Jau Tsao. These collaborations have further enhanced the development of innovative memory solutions.
Conclusion
Chih-Yuan Hsiao's contributions to static-random-access-memory technology demonstrate his expertise and commitment to innovation. His patents reflect a deep understanding of semiconductor processes and memory architecture, positioning him as a key figure in the industry.